MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 general description the MSD2N60 is a n-channel enhancement-mode mosfet , providing the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the to-252 package is universally preferred for all commercial-industrial applications features originative new design very low intrinsic capacitances excellent switching characteristics unrivalled gate charge : 9.5nc (typ.) extended safe operating area lower rds(on) : 4.0 (typ.) @vgs=10v 100% avalanche tested absolute maximum ratings (tc=25c unless otherwise specified) symbol parameter value unit v dss drain-source voltage 600 v drain current -continuous (t c =25 ) 2 a i d drain current -continuous (t c =100 ) 1.3 a i dm drain current -pulsed 8.0 a v gs gate-source voltage 30 v e as single pulsed avalanche energy 120 mj e ar repetitive avalanche energy 5.4 mj d v /d t peak diode recovery dv/dt 4.5 v/ns power dissipation (t c =25 ) 23 w p d - derate above 25 0.18 w/ t j ,t stg operating and storage temperature range ?55 to + 150 t l maximum lead temperature for soldering purpo ses, 1/8'' from case for 5 seconds 300 ? drain current limited by maximum junction temperature
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case ?? 2.87 r ja junction-to-ambient ?? 50.0 /w electrical characteristics (tc=25c unless otherwise specified) symbol parameter test conditions min type max units on characteristics v gs gate threshold voltage v ds =v gs ,i d =250 a 2.0 ?? 4.0 v r ds(on) static drain-source on-resistance v gs =10v,i d =1.0a ?? 4.0 4.7 ? off characteristics bv dss drain-source breakdown voltage v gs =0 v , i d =250 a 600 ?? ?? v bv dss /t j breakdown voltage temperature coefficient i d =250 a, referenced to 25 ?? 0.6 ?? v/ v ds =600v , v gs = 0 v ?? ?? 10 a i dss zero gate voltage drain current v ds =480v , v c = 125 ?? ?? 100 a i gssf gate-body leakage current, forward v gs =30v , v ds =0 v ?? ?? 100 na i gssr gate-body leakage current, reverse v gs =-30v , v ds =0 v ?? ?? ?100 na dynamic characteristics c iss input capacitance ?? 320 420 pf c oss output capacitance ?? 35 46 pf c rss reverse transfer capacitance v ds =25v, v gs =0v, f=1.0mhz ?? 4.5 6.0 pf switching characteristics t d(on) turn-on time ?? 8 30 ns t r turn-on rise time ?? 23 60 ns t d(off) turn-off delay time ?? 25 60 ns tf turn-off fall time v ds =300 v, i d =2a, r g =25 ? ?? 28 70 ns q g total gate charge ?? 9.5 13 nc q gs gate-source charge ?? 1.6 ?? nc q gd gate-drain charge v ds =480v,i d =2a, v gs =10 v ?? 4.0 ?? nc
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 source-drain diode maximum ratings and characteristics i s continuous source-drain diode forward current ?? ?? 2.0 i sm pulsed source-drain diode forward current ?? ?? 6.0 a v sd source-drain diode forward voltage i s =2a, v gs =0v ?? ?? 1.4 v trr reverse recovery time ?? 230 ?? ns qrr reverse recovery charge i s =2 a , v gs = 0v di f /dt=100a/ s ?? 1.0 ?? c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. ias=2.0a, vdd=50v, rg=25 ? , starting tj =25c 3. isd 2.0a, di/dt 300a/ s, vdd bvdss , starting tj =25 c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 ? characteristic curves figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 figure 5. capacitance characteristics figure 6. gate charge characteristics ? characteristic curves figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 figure 11. transient thermal response curve fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 fig 14. unclamped inductive swit ching test circuit & waveforms fig 15. peak diode recovery dv /dt test circuit & waveforms
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 package dimensions dimensions in millimeters
MSD2N60 600v n-channel mosfet ? bruckewell technology corporation rev. a -2012 legal disclaimer notice disclaimer all product, product specifications and da ta are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and em ployees, and all persons acting on its or their behalf (collectively, ?bruckewell?), disclaim any and all liability for any erro rs, inaccuracies or incompleteness contained in any datasheet or in any other di sclosure relating to any product. bruckewell makes no warranty, represen tation or guarantee regarding the su itability of the products for any particular purpose or the continuing production of any produc t. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability ar ising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitn ess for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewell?s knowledge of typical requirements that are often placed on bruckewell pr oducts in generic applications. such statements are not binding statemen ts about the suitability of products fo r a particular appl ication. it is the customer?s responsibility to validate that a particular produ ct with the properties described in the product specification is suitable for use in a particular applicati on. parameters provided in data sheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise m odify bruckewell?s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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